2sk4124 no. a0746-1/7 features ? low on-resistance, low input capacitance, ultrahigh-speed switching ? adoption of high reliability hvp process ? avalanche resistance guarantee speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 500 v gate-to-source voltage v gss 30 v drain current (dc) i d 20 a drain current (pulse) i dp pw 10 s, duty cycle 1% 60 a allowable power dissipation p d 2.5 w tc=25 c (sanyo?s ideal heat dissipation condition)*1 170 w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 110 mj avalanche current *2 i av 20 a * 1 sanyo?s condition is radiation from backside. the method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made o f aluminium. * 2 v dd =50v, l=500 h, i av =20a (fig.1) * 3 l 500 h, single pulse package dimensions unit : mm (typ) 7539-002 51612 tkim tc-00002752/40412 tkim tc-00002745/d0507 tiim tc-00001052/41807qb tiim tc-00000661 sanyo semiconductors data sheet 2sk4124 n-channel silicon mosfet general-purpose switching device applications http:// semicon.sanyo.com/en/network ordering number : ena0746c product & package information ? package : to-3p-3l ? jeita, jedec : sc-65, to-247, sot-199 ? minimum packing quantity : 30 pcs./magazine marking electrical connection k4124 lot no. 1 3 2 1 : gate 2 : drain 3 : source sanyo : to-3p-3l 15.6 1.5 0.6 2.0 1.0 123 18.4 10.0 16.76 5.45 5.45 3.2 7.0 3.5 5.0 19.9 20.0 3.0 4.8 13.6 1.4 2sk4124-1e
2sk4124 no. a0746-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =10ma, v gs =0v 500 v zero-gate voltage drain current i dss v ds =400v, v gs =0v 100 a gate-to-source leakage current i gss v gs =30v, v ds =0v 100 na cutoff voltage v gs (off) v ds =10v, i d =1ma 3 5 v forward transfer admittance | yfs | v ds =10v, i d =10a 4.9 9.7 s static drain-to-source on-state resistance r ds (on) i d =8a, v gs =10v 0.33 0.43 input capacitance ciss v ds =30v, f=1mhz 1200 pf output capacitance coss 250 pf reverse transfer capacitance crss 55 pf turn-on delay time t d (on) see fig.2 26.5 ns rise time t r 95 ns turn-off delay time t d (off) 145 ns fall time t f 58 ns total gate charge qg v ds =200v, v gs =10v, i d =20a 46.6 nc gate-to-source charge qgs 8.7 nc gate-to-drain ?miller? charge qgd 27.3 nc diode forward voltage v sd i s =20a, v gs =0v 1.0 1.3 v fig.1 avalanche resistance test circuit fig.2 switching time test circuit ordering information device package shipping memo 2sk4124-1e to-3p-3l 30pcs./magazine pb free pw=10 s d.c. 0.5% p. g r gs =50 g s d i d =10a r l =20 v dd =200v v out 2sk4124 v in 10v 0v v in 50 50 rg v dd l 10v 0v 2sk4124
2sk4124 no. a0746-3/7 it11732 it11733 drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a i d -- v ds i d -- v gs 0 0 45 40 30 35 25 20 15 10 30 525 15 20 10 5 15v 10v v gs =5v 6v 8v tc=25 c 0 45 30 35 40 25 20 15 10 5 020 18 16 412 210 68 14 v ds =20v tc= --25 c 25 c 75 c drain current, i d -- a switching time, sw time -- ns sw time -- i d drain-to-source voltage, v ds -- v ciss, coss, crss -- pf ciss, coss, crss -- v ds it11734 it11735 it11737 it11736 it11738 it11739 static drain-to-source on-state resistance, r ds (on) -- static drain-to-source on-state resistance, r ds (on) -- case temperature, tc -- c drain current, i d -- a forward transfer admittance, | y fs | -- s diode forward voltage, v sd -- v source current, i s -- a gate-to-source voltage, v gs -- v r ds (on) -- v gs r ds (on) -- tc i s -- v sd | y fs | -- i d r ds (on) -- v gs 3 0 1.2 1.0 0.6 0.8 15 13 59 711 0.4 0.2 i d =8a tc=75 c 25 c --25 c --50 --25 0 25 50 75 100 125 150 0 1.0 0.4 0.8 0.6 0.2 0.9 0.3 0.7 0.5 0.1 i d =8a, v gs =10v 0.1 23 57 23 1.0 23 5 5 7 10 1.0 10 2 3 5 7 5 7 3 2 3 v ds =10v 75 c 25 c 0.2 0.4 0.6 0.8 1.4 1.2 1.0 0.01 0.1 10 7 5 3 2 5 3 2 7 5 3 2 2 1.0 7 5 3 25 c --25 c tc=75 c v gs =0v 10 100 3 2 2 5 7 1000 3 5 7 0.1 1.0 23 57 23 5 10 23 5 77 v dd =200v v gs =10v t d (off) t r t f t d (on) 0 7 100 10 1000 5 3 2 7 5 3 2 10000 7 5 3 2 50 5253545 15 10 30 40 20 f=1mhz ciss coss crss tc= --25 c
2sk4124 no. a0746-4/7 drain-to-source voltage, v ds -- v a s o drain current, i d -- a it12415 total gate charge, qg -- nc gate-to-source voltage, v gs -- v v gs -- qg 0 0 1 2 3 4 5 6 7 8 50 40 10 9 10 20 30 v ds =200v i d =20a it16847 0.01 2 3 5 7 2 3 5 7 2 3 5 7 1.0 0.1 0.1 1.0 10 s 100 s 10ms 1ms dc operation 10 100 1000 23 7 10 2 3 5 7 100 i d =20a operation in this area is limited by r ds (on). 5 23 7 5 23 7 5 23 7 5 100ms i dp =60a(pw 10 s) tc=25 c single pulse 0 0 20 40 60 80 100 120 3.0 2.5 140 160 2.0 1.5 1.0 0.5 it12248 0 0 20 40 60 80 100 140 120 100 80 120 140 160 170 180 60 40 20 200 160 it12249 ambient temperature, ta -- c allowable power dissipation, p d -- w case temperature, tc -- c allowable power dissipation, p d -- w p d -- ta p d -- tc 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 e as -- ta avalanche energy derating factor -- % it10478 ambient temperature, ta -- c
2sk4124 no. a0746-5/7 magazine speci cation 2sk4124-1e
2sk4124 no. a0746-6/7 outline drawing 2sk4124-1e mass (g) unit 1.8 * for reference mm
2sk4124 no. a0746-7/7 ps this catalog provides information as of may, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. note on usage : since the 2sk4124 is a mosfet product, please avoid using this device in the vicinity of highly charged objects.
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